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| SKM 500GA123D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANSTM4 IGBT Modules SKM 500GA123D SKM 500GA123DS Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Inverse diode Typical Applications Thermal characteristics Mechanical data GA GA...S 1 23-09-2005 SCT (c) by SEMIKRON SKM 500GA123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 23-09-2005 SCT (c) by SEMIKRON SKM 500GA123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 23-09-2005 SCT (c) by SEMIKRON SKM 500GA123D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 23-09-2005 SCT (c) by SEMIKRON |
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